Dr.-Ing. Jennifer Lautner

Wissenschaftliche Mitarbeiterin bis 1/2018

Dissertation:

Lange A., Lautner J., Piepenbreier B.:
High Efficiency Three-Level Simplified Neutral Point Clamped (3L-SNPC) Inverter with GaN-Si Hybrid Structure
In: PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management 2018

Lautner J., Piepenbreier B.:
High Efficiency Three-Phase-Inverter with 650 V GaN HEMTs
International Exhibition and Conference on Power Elektronics, Intelligent Motion, Renewable Energy and Energy Management Year: 2016 (Nuremberg, Germany)
In: PCIM Europe 2016 2016

Lautner J., Piepenbreier B.:
Analysis of GaN HEMT switching behavior
2015 9th International Conference on Power Electronics and ECCE Asia (Seoul, South Korea, 1. Juni 2015 – 5. Juni 2015)
In: ICPE-ECCE Asia 2015
DOI: 10.1109/ICPE.2015.7167840
Lautner J., Piepenbreier B.:
Comparing Switching Performance of Gallium Nitride HEMT and Silicon Power MOSFET
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (Nuremberg, Germany, 19. Mai 2015 – 20. Mai 2015)
In: Proceedings of PCIM Europe 2015 2015

Lautner J., Piepenbreier B.:
Impact of current measurement on switching characterization of GaN transistors
2014 IEEE Workshop (Knoxville, USA, 13. Oktober 2014 – 15. Oktober 2014)
In: Wide Bandgap Power Devices and Applications (WiPDA) 2014
DOI: 10.1109/WiPDA.2014.6964632